| PART |
Description |
Maker |
| SBR30200R11 |
Voltage 200 V 30.0 Amp Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| MBR10200CT |
10 Amp High Voltage Power Schottky Barrier Rectifier 200 Volt
|
Kersemi Electronic Co.,...
|
| MBRA100 MBRA130 MBRA140 MBRA120 MBRA180 |
SURFACE MOUNT SCHOTTK Y BARRIER RECTIFIER
|
Shenzhen Taychipst Electronic Co., Ltd
|
| SSL32 SSL33 |
Surface Mount Schottk Barrier Rectifier
|
Shenzhen Taychipst Electronic Co., Ltd
|
| SSH210 |
Surface Mount Schottk Barrier Rectifier
|
Shenzhen Taychipst Electronic Co., Ltd
|
| ISL21009BMB841EP ISL21009CMB850EP ISL21009BMB850EP |
High Voltage Input Precision, Low Noise FGA™ Voltage References; Temperature Range: -55°C to 125°C; Package: 8-SOIC T&R THREE TERM VOLTAGE REFERENCE, PDSO8
High Voltage Input Precision, Low Noise FGA Voltage References
|
Intersil, Corp.
Intersil Corporation
|
| CS3P-40B CS3P-40P CS3P-40PB CS3P-40N CS3P-40M CS3P |
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 1200 V, SCR
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 1000 V, SCR
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 400 V, SCR
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 200 V, SCR
ISOLATED 40 AMP SCR 200 THRU 1200 VOLTS 40 A, 600 V, SCR
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| LTC6403IUD-1TRPBF |
200MHz, Low Noise, Low Power Fully Differential Input/Output Amplier/Driver; Package: QFN; No of Pins: 16; Temperature Range: -40°C to 85°C OP-AMP, 1500 uV OFFSET-MAX, 200 MHz BAND WIDTH, PQCC16
|
Linear Technology, Corp.
|
| CMR1F-10M CMR1F-02M CMR1F-04M CMR1F-06M |
FAST RECOVERY RECTIFIER 1.0 AMP/ 200 THRU 1/000 VOLTS
FAST RECOVERY RECTIFIER 1.0 AMP, 200 THRU 1,000 VOLTS 1 A, 200 V, SILICON, SIGNAL DIODE
FAST RECOVERY RECTIFIER 1.0 AMP, 200 THRU 1,000 VOLTS 1 A, 600 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| 1N387907 1N3883R 1N3879R 1N381 1N382 1N3882R |
Fast Recovery Rectifier
Fast Rectifier (100-500ns); Package: DO-4; IO (A): 6; IFSM (A): 200; Vrwm (V): 400; trr (nsec): 200; VF (V): 1.4; IR (µA): 15; 6 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AA
Fast Rectifier (100-500ns); Package: DO-4; IO (A): 6; IFSM (A): 200; Vrwm (V): 50; trr (nsec): 200; VF (V): 1.4; IR (µA): 15; 6 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA
Fast Rectifier (100-500ns); Package: DO-4; IO (A): 6; IFSM (A): 200; Vrwm (V): 300; trr (nsec): 200; VF (V): 1.4; IR (µA): 15;
|
Microsemi Corporation
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
